ds21612 rev. e-3 1 of 3 bc546-bc548 bc546 - bc548 npn epitaxial planar transistor features case: t0-92, plastic leads: solderable per mil-std-202, method 208 pin connections: see diagram weight: 0.18 grams (approx.) mechanical data maximum ratings t a = 25 c unless otherwise specified characteristic symbol value unit collector-base voltage bc546 bc547 bc548 v cbo 80 50 30 v collector-emitter voltage bc546 bc547 bc548 v ceo 65 45 30 v emitter-base voltage bc546, bc547 bc548 v ebo 6.0 5.0 v collector current i c 100 ma peak collector current i cm 200 ma peak emitter current i em 200 ma power dissipation (note 1) p d 500 mw thermal resistance, junction to ambient air (note 1) r q ja 250 k/w operating and storage temperature range t j ,t stg -65 to +150 c ideal for switching and af amplifier applications divided into current gain subgroups complementary pnp types available (bc556 - bc558) d c b e h h bottom view e a b c g to-92 dim min max a 4.45 4.70 b 4.46 4.70 c 12.7 d 0.41 0.63 e 3.43 3.68 g 2.42 2.67 h 1.14 1.40 all dimensions in mm notes: 1. leads maintained at ambient temperature at a distance of 2mm from case. 2. current gain subgroup c is not available for bc546. power semiconductor
ds21612 rev. e-3 2 of 3 bc546-bc548 electrical characteristics 25c unless otherwise specified notes: 1. leads maintained at ambient temperature at a distance of 2mm from case. 2. current gain subgroup c is not available for bc546. characteristic symbol min typ max unit test condition h-parameters small signal current gain current gain group a b c input impedance group a b c output admittance group a b c reverse voltage transfer ratio group a b c h fe h fe h fe h je h je h je h oe h oe h oe h re h re h re 1.6 3.2 6.0 220 330 600 2.7 4.5 8.7 18 30 60 1.5x10 - 4 2x10 -4 3x10 -4 4.5 8.5 15 30 60 110 k w k w k w s s s v ce = 5.0v, i c = 2.0ma, f = 1.0khz, note 2 dc current gain current gain group a b c group a b c group a b c h fe 110 200 420 90 150 270 180 290 500 120 200 400 220 450 800 note 2 v ce = 5.0v, i c = 10a v ce = 5.0v, i c = 2.0ma v ce = 5.0v, i c = 100ma collector-emitter saturation voltage v ce(sat) 80 200 200 600 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter saturation voltage v be(sat) 700 900 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter voltage v be 580 660 700 720 mv v ce = 5.0v, i c = 2.0ma v ce = 5.0v, i c = 10ma collector cutoff current bc556 bc557 bc558 bc556 bc557 bc558 i ces i ces i ces i ces i ces i ces i cbo i cbo 0.2 0.2 0.2 15 15 15 4.0 4.0 4.0 15 5.0 na na na a a a na a v ce = 80v v ce = 50v v ce = 30v v ce = 80v, t j = 125 c v ce = 50v, t j = 125 c v ce = 30v, t j = 125 c v cb = 30v v cb = 30v, t j = 150 c gain bandwidth product f t 300 mhz v ce = 5.0v, i c = 10ma, f = 100mhz collector-base capacitance c cbo 3.5 6.0 pf v cb = 10v, f = 1.0mhz emitter-base capacitance c ebo 9pf v eb = 0.5v, f = 1mhz noise figure nf 2.0 10 db v ce = 5.0v, i c = 200a, r g = 2.0k w , f = 1.0khz, d f = 200hz
ds21612 rev. e-3 3 of 3 bc546-bc548 1 10 100 1000 10 -2 10 -1 1 10 100 h , dc current gain fe i , collector current (ma) fig. 2, dc current gain vs collector current c v=5v ce 100c t = 25c amb -50c 0 0.1 0.2 0.3 0.4 0.5 0.1 1 10 100 v , collector saturation voltage (v) cesat i , collector current (ma) fig. 3, collector sat. voltage vs collector current c i/i=20 cb t = 25c a 100c -50c 10 100 1000 0.1 1.0 10 100 | , gain-bandwidth product (mhz) t i , collector current (ma) fig. 4, gain-bandwidth product vs collector current c v = 10v ce 5v 2v t = 25c a 0 100 200 300 400 500 0 100 200 p , power dissipation (mw) d t , ambient temperature (c) fig. 1, power derating curve a see note 1
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